▎ 摘　　要

Photoconductivity of large-area graphene oxide thin film with high doping level of nitrogen in the basal plane of the graphene sheets are firstly demonstrated in this work. The N-doped graphene oxide thin film obtained by annealing reduction in NH3 atmosphere for 20 min (NRGO-20) has a high N content of 10.24 at.%, among which the predominant one is the pyridine-like N with the content of similar to 4.54 at.% in the basal plane of the graphene sheets. Compared to the reduced graphene oxide thin film obtained by annealing in Ar atmosphere for 20 min (RGO-20), the photocurrent of NRGO-20 thin film is significantly improved. The NRGO-20 film exhibits significant photocurrent enhancement with a high enhancement ratio of approximately 3,000 % under white-light irradiation at bias voltage of 0.5 mV. It might be attributed to its conjugation effect with the high content of pyridine-like N in the basal plane of the graphene sheets.