• 文献标题:   Light-induced negative differential resistance in gate-controlled graphene-silicon photodiode
  • 文献类型:   Article
  • 作  者:   LIU W, GUO HW, LI W, WAN X, BODEPUDI SC, SHEHZAD K, XU Y
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Zhejiang Univ
  • 被引频次:   4
  • DOI:   10.1063/1.5026382
  • 出版年:   2018

▎ 摘  要

In this letter, we investigated light-induced negative differential resistance (L-NDR) effects in a hybrid photodiode formed by a graphene-silicon (GS) junction and a neighboring graphene-oxide-Si (GOS) capacitor. We observed two distinct L-NDR effects originating from the gate-dependent surface recombination and the potential-well-induced confinement of photo-carriers in the GOS region. We verified this by studying the gate-controlled GS diode, which can distinguish the photo-current from the GS region with that from the GOS region (gate). A large peak-to-valley ratio of up to 12.1 has been obtained for the L-NDR due to gate-dependent surface recombination. Such strong L-NDR effect provides an opportunity to further engineer the optoelectronic properties of GS junctions along with exploring its potential applications in photodetectors, photo-memories, and position sensitive devices. Published by AIP Publishing.