• 文献标题:   Band-gap scaling of graphene nanohole superlattices
  • 文献类型:   Article
  • 作  者:   LIU W, WANG ZF, SHI QW, YANG JL, LIU F
  • 作者关键词:   band structure, energy gap, graphene, semiconductor superlattice, tightbinding calculation
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Univ Sci Technol China
  • 被引频次:   98
  • DOI:   10.1103/PhysRevB.80.233405
  • 出版年:   2009

▎ 摘  要

Based on the tight-binding model, we investigate band structures of graphene nanohole (GNH) superlattices as a function of NH size and density. One common origin of band gaps for GNH superlattices with NHs of either armchair or zigzag edges is the quantum-confinement effect due to the periodic potential introduced by the NHs, which turns the semimetallic sheet into a direct-gap semiconductor. Additional band gaps also open for GNH superlattices with NHs of zigzag edges in a ferromagnetic ground state, arising from the staggered sublattice potential on the zigzag edges due to edge magnetization. Our calculations reveal a generic scaling relation that both types of band gaps increase linearly with the product of NH size and density.