▎ 摘　　要

Using high-quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage V(tg) is varied. In the V(tg)-B plane, the fluctuations form crisscrossing lines that are parallel to those of the adjacent plateaus, with different temperature dependences for the conductance peaks and valleys. These fluctuations arise from Coulomb-induced charging of electron- or hole-doped localized states when the device bulk is delocalized, underscoring the importance of electronic interactions in graphene in the QH regime.