▎ 摘　　要

A novel lateral all-graphene tunnel field-effect transistor (FET) with superior ON/OFF current switching ratio is proposed and simulated. The structure consists of two coplanar graphene layers serving as source and drain separated by a narrow tunnel gap. Both barrier transparency and tunnel density of states are controlled by top and bottom gates made of graphene too. The proposed FET exhibits an ultrahigh frequency performance inherent to graphene along with a subthreshold slope approaching the thermionic limit and current saturation inherent to common semiconductor FETs.