▎ 摘　　要

We investigate the mesoscopic resistance fluctuations (MRFs) that, as we showed previously, cause the exponentially decaying low-temperature resistance anomaly in graphene monolayers. We determine autocorrelation functions and power spectra for the MRFs, finding that the fluctuations have shorter periods (as a function of gate voltage) near the neutrality point. We also investigate the origin of the sharp increase of An example of mesoscopic resistance fluctuations as a function the resistance of graphene on a Si/SiO2 substrate at higher temperatures and at higher charge carrier densities. We show of gate voltage from the neutrality point (with that a very good description of this increase is given by resistance at temperature 51 K subtracted). scattering by the experimentally observed graphene zone-boundary phonons of energy 160 meV (that cause current saturation in carbon nanotubes) and by lower energy phonons (70 meV) that make a smaller contribution. [GRAPHICS] An example of mesoscopic resistance fluctuations as a function of gate voltage from the neutrality point (with resistance at temperature 51 K subtracted). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim