▎ 摘　　要

Bilayer graphene (BLG) is a well-known allotrope of carbon atoms and nominated to be used as an appropriate transistor channel. In spite of advances for preparing defect-free and crystalline BLGs, unwanted defects are emerged during immature fabrication process. This paper investigates I-V curves of bilayer graphene nanoribbon FET (BLGNRFET) in the presence of one of the most possible defect called Stone-Wales (SW) defect. These defects are located at three positions along and across the channel. Simulation approach is performed by fully quantum-mechanical numerical calculations using Non-Equilibrium Green's Function (NEGF) formalism. The role of the defect position is studied for both OFF and ON states. Furthermore, the effect of the defect position is included on several digital and analog metrics such as delay, power delay product and cut-off frequency.