▎ 摘　　要

Nanostructures based on ZnO have been widely studied due to their electronic and piezoelectric properties. Experimental studies have shown that thin films based on ZnO can be used as chemical and optoelectronic sensors. The great goal of this work is to study of the role of the number of graphene-like layers in the physical properties of the ZnO. Therefore, the geometrical and electronic properties of graphene-like structures will be compared with the wurtzite one. In this work, the pn-type semiconducting behavior of the graphene-like structures and its relationship with the number of layers will be also analyzed.