• 文献标题:   Chemistry at the graphene-SiO2 interface
  • 文献类型:   Article
  • 作  者:   HOSSAIN MZ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Illinois
  • 被引频次:   39
  • DOI:   10.1063/1.3247964
  • 出版年:   2009

▎ 摘  要

The structure and energetics and the chemistry of graphene on SiO2 surface are studied from first-principles. It is found that the energetic preference for the graphene layer to bind on specific sites on the O-terminated surface differs substantially from that on the Si-terminated surface. Regardless of the location of binding sites on a particular surface, electrons transfer from the graphene layer to the dielectric surface and its quantity is higher for the O-terminated surface. In addition, the electron transfer strongly depends on the type of surface termination but is independent of the binding site. (C) 2009 American Institute of Physics. [doi:10.1063/1.3247964]