• 文献标题:   Carbon Dots Dispersed on Graphene/SiO2/Si: A Morphological Study
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   FAGGIO G, GNISCI A, MESSINA G, LISI N, CAPASSO A, LEE GH, ARMANO A, SCIORTINO A, MESSINA F, CANNAS M, GELARDI FM, SCHILIRO E, GIANNAZZO F, AGNELLO S
  • 作者关键词:   atomic force microscopy, carbon dot, chemical vapor deposited graphene, raman spectroscopy
  • 出版物名称:   PHYSICA STATUS SOLIDI AAPPLICATIONS MATERIALS SCIENCE
  • ISSN:   1862-6300 EI 1862-6319
  • 通讯作者地址:   Univ Mediterranea Reggio Calabria
  • 被引频次:   3
  • DOI:   10.1002/pssa.201800559
  • 出版年:   2019

▎ 摘  要

Low-dimensional carbon materials occupy a relevant role in the field of nanotechnology. Herein, the authors report a study conducted by atomic force microscopy and Raman spectroscopy on the deposition of carbon dots onto graphene surfaces. The study aims at understanding if and how the morphology and the microstructure of chemical vapor deposited graphene on Si/SiO2 may change due to the interaction with the carbon dots. Potential alteration in the graphene's electrical properties might be detrimental for optoelectronic applications. The deposition of carbon dots dispersed in water and ethanol solvents are explored to investigate the effect of solvents with different fluidic properties. The obtained results indicate that the carbon dots do not alter the quality of graphene.