▎ 摘　　要

In this study, silicon carbide was prepared by microwave sintering method with graphene as carbon source and ethyl orthosilicate as the silicon source. First, SiO2 particles were in situ covered on the surface of graphene by sol-gel method, and then one-dimensional silicon carbide nanowires were obtained by car-bothermal reduction reaction. The macro morphology of SiC nanowires with different sintering tempera-tures was observed, and the samples were characterized and analyzed by XRD, FTIR, and SEM. From the XRD results, we can see there were sharp diffraction peaks of SiC sintering at 1500 degrees C, indicating that beta-SiC was generated at 1500 degrees C via microwave sintering. It can be shown that one-dimensional SiC nanowires were interwoven into the two-dimensional SiC nanonetworks due to using graphene sheets as the templates. The results showed that SiC nanowires could be successfully prepared by microwave sintering using graphene/SiO2 as precursors; the optimal sintering temperature is 1500 degrees C, and the keeping time is 40 min. Therefore, using microwave sintering to synthesize SiC is a more appropriate way to reduce manufacturing energy consumption, save cost and improve production efficiency. (C) 2022 Published by Elsevier B.V.