• 文献标题:   Complete coverage of reduced graphene oxide on silicon dioxide substrates
  • 文献类型:   Article
  • 作  者:   HUANG JF, LARISIKA M, CHEN H, FAULKNER S, NIMMO MA, NOWAK C, YOONG ATI
  • 作者关键词:   graphene oxide, reduced graphene oxide, graphene growth, field effect transistor
  • 出版物名称:   CHINESE PHYSICS B
  • ISSN:   1674-1056 EI 1741-4199
  • 通讯作者地址:   Nanyang Technol Univ
  • 被引频次:   0
  • DOI:   10.1088/1674-1056/23/8/088104
  • 出版年:   2014

▎ 摘  要

Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (