• 文献标题:   Surface modification of multilayer graphene using Ga ion irradiation
  • 文献类型:   Article
  • 作  者:   WANG Q, SHAO Y, GE DH, YANG QZ, REN NF
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Jiangsu Univ
  • 被引频次:   8
  • DOI:   10.1063/1.4919071
  • 出版年:   2015

▎ 摘  要

The effect of Ga ion irradiation intensity on the surface of multilayer graphene was examined. Using Raman spectroscopy, we determined that the irradiation caused defects in the crystal structure of graphene. The density of defects increased with the increase in dwell times. Furthermore, the strain induced by the irradiation changed the crystallite size and the distance between defects. These defects had the effect of doping the multilayer graphene and increasing its work function. The increase in work function was determined using contact potential difference measurements. The surface morphology of the multilayer graphene changed following irradiation as determined by atomic force microscopy. Additionally, the adhesion between the atomic force microscopy tip and sample increased further indicating that the irradiation had caused surface modification, important for devices that incorporate graphene. (C) 2015 AIP Publishing LLC.