• 文献标题:   Graphene-beta-Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
  • 文献类型:   Article
  • 作  者:   KONG WY, WU GA, WANG KY, ZHANG TF, ZOU YF, WANG DD, LUO LB
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Hefei Univ Technol
  • 被引频次:   143
  • DOI:   10.1002/adma.201604049
  • 出版年:   2016

▎ 摘  要

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (beta-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.