▎ 摘　　要

We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering properties in equilibrium without the need for lateral transport measurements. This finding will facilitate vetting of extended structural defects, such as grain boundaries or line defects as transport barriers for switchable graphene resonant tunneling transistors. We also show that barriers could exhibit double minima and that the charge density away from highly reflective barriers and edges scales as x(-2).