• 文献标题:   High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires
  • 文献类型:   Article
  • 作  者:   YOO TJ, KIM WS, CHANG KE, KIM C, KWON MG, JO JY, LEE BH
  • 作者关键词:   chemical vapor deposition cvd graphene, photodetector, bi2te3 nanowire, infrared photodetector, graphene photodetector
  • 出版物名称:   NANOMATERIALS
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   8
  • DOI:   10.3390/nano11030755
  • 出版年:   2021

▎ 摘  要

A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 x 10(4) and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (similar to 0.09 mA/W).