• 文献标题:   Production of N-graphene by microwave N-2-Ar plasma
  • 文献类型:   Article
  • 作  者:   DIAS A, BUNDALESKI N, TATAROVA E, DIAS FM, ABRASHEV M, CVELBAR U, TEODORO OMND, HENRIQUES J
  • 作者关键词:   microwave plasma, ngraphene, nitrogen atom
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   Univ Lisbon
  • 被引频次:   11
  • DOI:   10.1088/0022-3727/49/5/055307
  • 出版年:   2016

▎ 摘  要

Self-standing N-graphene sheets were produced in low-pressure microwave N-2-Ar plasma. The graphene sheets were exposed to the plasma for various durations and doped with nitrogen atoms, which were incorporated into the hexagonal carbon lattice in pyridinic, pyrrolic and quaternary functional groups, mainly. Atomic nitrogen emissions at the substrate position in the plasma were detected using optical emission spectroscopy. Raman spectroscopy, x-ray photoelectron spectroscopy and transmission electron microscopy techniques were also applied for material characterization. Doping levels as high as 5.6% were achieved and an increase in the sp(2)/sp(3) ratio was observed for a relatively short exposure time.