▎ 摘　　要

The structure for beta-Ga2O3/Graphene and beta-Ga2O3/BP heterostructure MOSFET has been proposed and investigated for the first time in this work. The RF performance of proposed structure was analyzed and compared with the experimental results of the conventional beta-Ga2O3 MOSFET. The key RF figure of merits (FOMs) such as transconductance (g(m)), cutoff frequency (f(T)), output power (P-OUT), power Gain (G(P)) and power added efficiency (PAE) is obtained for the above proposed structure. The large signal RF performance analysis of earlier proposed structure has also been carried out in this work by using CWClass-A power measurement at the frequency of 0.8 GHz using passive load and source tuning. This work elucidate the use of beta-Ga2O3/Graphene and beta-Ga2O3/BP heterostructure MOSFETs, for efficient monolithic and heterogeneous integration of RF circuits. (C) The Author(s) 2019. Published by ECS.