• 文献标题:   Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
  • 文献类型:   Article
  • 作  者:   YAZYEV OV, PASQUARELLO A
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Univ Calif Berkeley
  • 被引频次:   80
  • DOI:   10.1103/PhysRevB.80.035408
  • 出版年:   2009

▎ 摘  要

We propose monolayer epitaxial graphene and hexagonal boron nitride (h-BN) as ultimate thickness covalent spacers for magnetoresistive junctions. Using a first-principles approach, we investigate the structural, magnetic, and spin transport properties of such junctions based on structurally well-defined interfaces with (111) fcc or (0001) hcp ferromagnetic transition metals. We find low resistance area products, strong exchange couplings across the interface, and magnetoresistance ratios exceeding 100% for certain chemical compositions. These properties can be fine tuned, making the proposed junctions attractive for nanoscale spintronics applications.