▎ 摘　　要

Device architectures based on the two-dimensional material graphene can be used for sensing of electromagnetic and particle radiation. The sensing mechanism may be direct, by absorbance of radiation by the graphene or the immediately adjacent material, and indirect, via the field effect principle, whereby the change in conductivity within a semiconducting absorber substrate induces electric field change at graphene. Here, we report on a graphene field effect transistor (GFET) sensitive to heavy charged particle radiation (a particles) at MeV energies by use of the indirect sensing mechanism. Both the continuous and discrete changes of graphene are observed, and the latter are attributed to single a particle interactions with the GFET. While this study provides the basis for understanding of the irradiation effects, it also opens prospects for the use of GFETs as heavy charged particle detectors. Published by AIP Publishing.