▎ 摘　　要

Tin disulfide (SnS2) nanosheets have attracted tremendous attention owing to their unique electronic and optoelectronic properties. However, practical photodetector applications based on SnS2 are usually limited by low responsiveness and fast electron-hole recombination. Fortunately, graphene exhibits attractive potential for optoelectronic owing to its intrinsic high carrier mobility conductivity, large surface area, and mechanical flexibility. Herein, we have prepared SnS2/graphene heterostructures by a facile hydrothermal method. The as-prepared SnS2/graphene heterostructures are used to fabricate photodetectors on both SiO2/Si and flexible polyethylene terephthalate (PET) substrates, and the performances of the photodetectors have been investigated under wavelengths ranging from 365 to 577nm. The results show that as-fabricated photodetector on SiO2/Si substrate has achieved excellent stability; meanwhile, the photocurrent densities of SnS2/graphene on PET substrate are not influenced by the external bending representing an excellent mechanical stress stability. All of the experimental results propose that the SnS2/graphene heterostructures possess great potential in light detection.