• 文献标题:   Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption
  • 文献类型:   Article
  • 作  者:   KIM H, RENAULT O, TYURNINA A, SIMONATO JP, ROUCHON D, MARIOLLE D, CHEVALIER N, DIJON J
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Grenoble Alpes
  • 被引频次:   30
  • DOI:   10.1063/1.4889747
  • 出版年:   2014

▎ 摘  要

We report on the efficiency and thermal stability of p-doping by iodine on single and randomly stacked, weakly coupled bilayer polycrystalline graphene, as directly measured by photoelectron emission microscopy. The doping results in work function value increase of 0.4-0.5 eV, with a higher degree of iodine uptake by the bilayer (2%) as compared to the single layer (1%) suggesting iodine intercalation in the bilayer. The chemistry of iodine is identified accordingly as I-3(-) and I-5(-) poly iodide anionic complexes with slightly higher concentration of I-5(-) in bilayer than monolayer graphene, likely attributed to differences in doping mechanisms. Temperature dependent in-situ annealing of the doped films demonstrated that the doping remains efficient up to 200 degrees C. (C) 2014 AIP Publishing LLC.