• 文献标题:   Atmospheric Pressure Chemical Vapor Deposition of Graphene Using a Liquid Benzene Precursor
  • 文献类型:   Article
  • 作  者:   KANG C, JUNG DH, LEE JS
  • 作者关键词:   graphene, atmospheric pressure, liquid benzene, vapor pressure
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   Sookmyung Womens Univ
  • 被引频次:   1
  • DOI:   10.1166/jnn.2015.11557
  • 出版年:   2015

▎ 摘  要

Graphene has attracted great attention owing to its unique structural and electrical properties. Among various synthetic approaches of the graphene, metal assisted chemical vapor deposition (CVD) is the most reasonable and proper method to produce large-scale and low-defect graphene films. Until now, CVD from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth, but high growth temperature is required for such growth. A recent work by using liquid benzene precursor has shown that monolayer graphene could be obtained at 300 degrees C by low pressure, required for high vacuum equipment. Here, we report the first successful attempt of atmospheric pressure CVD graphene growth on Cu foil using liquid benzene as a precursor. We investigated the effect of hydrogen partial pressure, growth time, and precursor temperature on the domain size of as-grown graphene. Also, micro-Raman analysis confirmed that these reaction parameters influenced the number of layer and uniformity of the graphene.