• 文献标题:   Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars
  • 文献类型:   Article
  • 作  者:   TOMORI H, KANDA A, GOTO H, OOTUKA Y, TSUKAGOSHI K, MORIYAMA S, WATANABE E, TSUYA D
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778
  • 通讯作者地址:   Univ Tsukuba
  • 被引频次:   69
  • DOI:   10.1143/APEX.4.075102
  • 出版年:   2011

▎ 摘  要

A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene. (C) 2011 The Japan Society of Applied Physics