• 文献标题:   Role of topographical defects in organic film growth of 4,4 '-biphenyldicarboxylic acid on graphene: A low-energy electron microscopy study
  • 文献类型:   Article
  • 作  者:   KHOKHAR FS, VAN GASTEL R, POELSEMA B
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Twente
  • 被引频次:   12
  • DOI:   10.1103/PhysRevB.82.205409
  • 出版年:   2010

▎ 摘  要

We have used low-energy electron microscopy (LEEM) to study the formation of self-assembled molecular networks on graphene sheets. 4,4'-biphenyldicarboxylic acid (BDA) molecular networks were grown using organic molecular beam epitaxy. LEEM images provide direct insight in the growth dynamics and show that defects in the graphene play a crucial role in the final morphology of the molecular film that forms. BDA is demonstrated to form hydrogen bond-stabilized chains on graphene. Dark-field LEEM images reveal that the same defects that determine the morphology of the film, also direct the orientation of the domains, highlighting the importance of understanding the role of defects in epitaxial processes on graphene.