▎ 摘　　要

Freestanding 3D graphene with a controllable electronic state is quite desirable for high-power all-carbon electronics. Although field-effect doping and charge doping have been demonstrated to manipulate the electronic properties of graphene derivatives, using these strategies to achieve nanoscale control remains a challenge. Herein, we developed a strategy for in situ triggering metallicity in semiconductor 3D graphene films (GFs) by building 1D wrinkles. Moreover, the controllable engineering of wrinkles represents a feasible way to realize the manipulation of 1D metallic states with characteristic width ranging from nanoscale to mesoscale. The global metallicity is achieved in GFs by constructing wrinkle percolation networks. The idea of in situ triggering metallicity in semiconducting graphene demonstrates potential application in high-power nanoelectronics. A striking case is that in situ constructing 1D metallic wrinkle provides a promising candidate as the metallic wire interconnects in all-carbon electronics. Published under an exclusive license by AIP Publishing.