▎ 摘　　要

We report preparation of graphene oxide (GO)/graphene (G) nanostructures and their structural, optical and electrical properties. GO was synthesized through oxidation of graphite by using the modified Hummer's method, in which a long oxidation time was combined with a highly effective method for purifying the reaction products. The obtained GO was partially reduced (r-GO) by adding ascorbic acid and thermal annealing. An electrical reduction/oxidation process in r-GO under an electric field was used to form and control the GO/G nanostructures and the potential barrier at the interface. After the treatment, the ratio of the intensity of peak G (1578 cm(-1)) to that of peak D (1357 cm(-1)) in Raman spectra of the samples is increased, which is attributed to an increase in the ratio between the sp(2) and sp(3) regions. The electrical and the luminescence characteristics of the GO/G nanostructures were investigated.