▎ 摘　　要

Epitaxial grapheme: a model system for isolated graphene Large scale transistor integration has been produced in nnultilayer epitaxial graphene grown on SiC. This material is a new structure of carbon, consisting of a rotationally ordered stacking of graphene layers. Experiments performed at the high resolution photoemission beam line Cassiopee at the SOLEIL synchrotron have demonstrated that very surprisingly these graphene layers are electronically decoupled and have the electronic structure of a single isolated layer graphene.