• 文献标题:   Encapsulation of graphene in Parylene
  • 文献类型:   Article
  • 作  者:   SKOBLIN G, SUN J, YURGENS A
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chalmers Univ Technol
  • 被引频次:   10
  • DOI:   10.1063/1.4975491
  • 出版年:   2017

▎ 摘  要

Graphene encapsulated between flakes of hexagonal boron nitride (hBN) demonstrates the highest known mobility of charge carriers. However, the technology is not scalable to allow for arrays of devices. We are testing a potentially scalable technology for encapsulating graphene where we replace hBN with Parylene while still being able to make low-ohmic edge contacts. The resulting encapsulated devices show low parasitic doping and a robust Quantum Hall effect in relatively low magnetic fields < 5 T. Published by AIP Publishing.