• 文献标题:   Band gap tunning in BN-doped graphene systems with high carrier mobility
  • 文献类型:   Article
  • 作  者:   KALONI TP, JOSHI RP, ADHIKARI NP, SCHWINGENSCHLOGL U
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   KAUST
  • 被引频次:   47
  • DOI:   10.1063/1.4866383
  • 出版年:   2014

▎ 摘  要

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers. (C) 2014 AIP Publishing LLC.