▎ 摘　　要

The problem of epitaxial graphene formed on a semiconductor substrate is considered in the context of the extended Hubbard and Holstein-Hubbard models for electron-electron and electron-phonon interactions. The Haldane-Anderson model is chosen for the density of states of the substrate. Three regions of the phase diagram, specifically, spin- and charge-density waves and a spin- and charge-homogeneous paramagnetic state are considered. For a number of special cases used as examples, the similarities and differences of the electron states of graphene on semiconductor and metal substrates are demonstrated. It is shown that the main difference arises, if the Dirac point of graphene lies within the band gap of the semiconductor. Numerical estimations are performed for a SiC substrate.