• 文献标题:   Few graphene layers/carbon nanotube composites grown at complementary-metal-oxide-semiconductor compatible temperature
  • 文献类型:   Article
  • 作  者:   JOUSSEAUME V, CUZZOCREA J, BERNIER N, RENARD VT
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   CEA LETI Minatec
  • 被引频次:   32
  • DOI:   10.1063/1.3569142
  • 出版年:   2011

▎ 摘  要

We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nanotubes grow epitaxially under the few graphene layers. By using a catalyst and gaseous carbon precursor different from those used originally we establish that such unconventional growth mode is not specific to a precise choice of catalyst-precursor couple. Furthermore, the composite can be grown using catalyst and temperatures compatible with complementary-metal-oxide-semiconductor processing (T < 450 degrees C). (C) 2011 American Institute of Physics. [doi:10.1063/1.3569142]