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  • 文献标题:   Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications (vol 100, 233506, 2012)
  • 文献类型:   Correction
  • 作　　者:   MISRA A, WAIKAR M, GOUR A, KALITA H, KHARE M, ASLAM M, KOTTANTHARAYIL A
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Indian Inst Technol
  • 被引频次:   0
  • DOI:   10.1063/1.4754145
  • 出版年:   2012

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