▎ 摘　　要

Themost attractive application of graphene in the RF area is low-noise amplifier (LNA) due to its amazing properties. But, design and fabrication of graphene LNA Monolithic Microwave Integrated Circuits (MMICs) are still blank. In this work, 200 nm gate-length chemical vapor deposition (CVD) monolayer graphene transistorswere fabricated on a sapphire substrate. The graphene transistor shows an intrinsic gain of g(m)/ g(ds) = 1.1, and high extrinsic maximumoscillation frequency with f max (48 GHz) > cutoff frequency f(T) (43 GHz). The graphene transistors show low extrinsic minimum noise figure of 2-7 dB in the measured frequency range of 6-50GHz. A C-band graphene LNAMMIC was designed and fabricated and shows a maximumgain of 8.34 dB at 5.5 GHz, and minimum noise figure of 4.96 dB at 5.8 GHz. This work demonstrates the application potential of graphene for future RF high- speed electronics.