▎ 摘　　要

A novel method to analyze the ferroelectric switching behaviors of Hf0.5Zr0.5O2 (HZO) gate dielectric is developed using the unique charge response characteristics of graphene field effect transistor (GFET). The linear density of state of graphene in a low V-g region enables a detailed transient analysis of the effects of transient charging and dipole switching. The trans-conductance of GFET with ferroelectric HZO is observed to be increased by 610% in DC measurement with a minimal hysteresis as reported for negative capacitance FET. However, fast pulse I-V analysis reveals that the improved swing and small hysteresis of GFET with ferroelectric HZO are the result of compensation between the bulk charge trapping and dipole charges.