• 文献标题:   Electronic transport in Thue-Morse gapped graphene superlattice under applied bias
  • 文献类型:   Article
  • 作  者:   WANG MJ, ZHANG HM, LIU D
  • 作者关键词:   graphene superlattice, thuemorse sequence, band gap, electric field
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   Hebei Normal Univ
  • 被引频次:   0
  • DOI:   10.1016/j.physe.2017.12.033
  • 出版年:   2018

▎ 摘  要

We investigate theoretically the electronic transport properties of Thue-Morse gapped graphene superlattice under an applied electric field. The results indicate that the combined effect of the band gap and the applied bias breaks the angular symmetry of the transmission coefficient. The zero-averaged wave-number gap can be greatly modulated by the band gap and the applied bias, but its position is robust against change of the band gap. Moreover, the conductance and the Fano factor are strongly dependent not only on the Fermi energy but also on the band gap and the applied bias. In the vicinity of the new Dirac point, the minimum value of the conductance obviously decreases and the Fano factor gradually forms a Poissonian value plateau with increasing of the band gap.