▎ 摘　　要

This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (R-S) mechanisms by measuring the current-voltage characteristics for Au/PMMA/heavily doped p-type Si (p(+)-Si) and Au/PMMA:RGO/p(+)-Si devices. The effect of RGO content on theR(S)properties is also determined. The Au/PMMA/p(+)-Si device exhibits set/reset-free current-voltage characteristics because of the insulating properties of PMMA. However, the Au/PMMA:RGO/p(+)-Si device exhibitsR(S)behavior. Incorporating RGO into PMMA results in an increase in conductivity, the formation of PMMA-RGO interfaces and a significant increase in the trap density at the PMMA/RGO interfaces, so theR(S)performance is improved for Au/PMMA:RGO/p(+)-Si devices. It is shown that the current density for Au/PMMA:RGO/p(+)-Si devices is limited by the combined effect of ohmic conduction, space-charge-limited current conduction and trap-filled limited current conduction. An excess amount of RGO in PMMA does not result in any memory effect during the forward- and reverse-biased sweeps because there is a significant increase in the conductivity of PMMA:RGO film.