• 文献标题:   Passivation of CdSe Quantum Dots by Graphene and MoS2 Monolayer Encapsulation
  • 文献类型:   Article
  • 作  者:   ZHANG DT, WANG DZR, CRESWELL R, LU CG, LIOU J, HERMAN IP
  • 作者关键词:  
  • 出版物名称:   CHEMISTRY OF MATERIALS
  • ISSN:   0897-4756 EI 1520-5002
  • 通讯作者地址:   Columbia Univ
  • 被引频次:   8
  • DOI:   10.1021/acs.chemmater.5b01522
  • 出版年:   2015

▎ 摘  要

The encapsulation of a monolayer of CdSe quantum dots (QDs) by one-to-three layer graphene and MoS2 sheets protects the QDs from oxidation. Photoluminescence (PL) from the QD cores shows a much slower decrease in core diameter over time due to slower oxidation in regions where the QDs are covered by van der Waals (vdW) layers than in those where they are hot, for chips stored both in the dark and in the presence of light. PL mapping shows that the CdSe QDs under the central part of the vdW sheet age slower than those near its edges, because oxidation Of the covered QDs is limited by transport of oxygen from the edges of the vdW sheets and not transport across the vdW layers. The transport of oxygen to the covered QDs is analyzed by coupling the PL results and a model of QD core oxidation.