文献标题: Probing transconductance spatial variations in graphene nanoribbon field-effect transistors using scanning gate microscopy
文献类型: Article
作 者: SOUDI A, AIVAZIAN G, SHI SF, XU XD, GU Y
作者关键词:
出版物名称: APPLIED PHYSICS LETTERS
ISSN: 0003-6951 EI 1077-3118
通讯作者地址: Washington State Univ
被引频次: 15
DOI: 10.1063/1.3678034
出版年: 2012
▎ 摘 要
We have used scanning gate microscopy to probe local transconductance in graphene nanoribbon (GNR) field-effect transistors (FETs) fabricated from chemical vapor deposition-grown graphene. Particularly, nanometer-scale (]
