▎ 摘　　要

Electrical characteristics of p-, n-GaN/graphene junctions before and after nitric acid doping have been investigated. Acid treatment can significantly improve the junction conductance in both cases, which is advantageous for the light emitting diode (LED) to reduce the operating voltage. GaN-based vertical LEDs incorporating graphene as transparent electrodes are further assembled and tested, showing significant improvement in forward electrical characteristics and light output power upon acid modification.