• 文献标题:   Improving contact performance of graphene on p-type GaN thin films with V-pits microstructures
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   SONG RN, KE WC
  • 作者关键词:   pgan, graphene, vpit
  • 出版物名称:   INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • ISSN:   0217-9792 EI 1793-6578
  • 通讯作者地址:   Natl Taiwan Univ Sci Technol
  • 被引频次:   0
  • DOI:   10.1142/S0217979218400520
  • 出版年:   2018

▎ 摘  要

This study presents the electrical properties of graphene that directly is contact on two types of p-type GaN thin films. The diameter of several hundred nanometer V-pits were formed on the p-GaN thin films by adjusting the NH3 flow rate during the metal organic chemical vapor deposition epitaxial process. The single-layer graphene with a high transmittance of 97% in the visible range was transferred on p-GaN thin films to form an Ohmic contact. The V-pits provide more carrier transport paths that promote the carrier tunneling into p-GaN thin films, resulting in a better Ohmic contact performance. In addition, the increased current value was attributed to the presence of V-pits on the p-GaN thin films.