▎ 摘　　要

The use of boron nitride (BN) as a substrate for graphene nanodevices has attracted much interest since the recent report that BN greatly improves the mobility of charge carriers in graphene compared to standard SiO2 substrates. We have explored the local microscopic properties of graphene on a BN substrate using scanning tunneling microscopy. We find that BN substrates result in extraordinarily flat graphene layers that display microscopic Moire patterns arising from the relative orientation of the graphene and BN lattices. Gate-dependent dI/dV spectra of graphene on BN exhibit spectroscopic features that are sharper than those obtained for graphene on SiO2. We observe a significant reduction in local microscopic charge inhomogeneity for graphene on BN compared to graphene on SiO2.