• 文献标题:   A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H-SiC
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   KAMOI S, KISODA K, HASUIKE N, HARIMA H, MORITA K, TANAKA S, HASHIMOTO A, HIBINO H
  • 作者关键词:   epitaxial graphene, raman imaging, confocal raman spectroscopy, vicinal
  • 出版物名称:   DIAMOND RELATED MATERIALS
  • ISSN:   0925-9635 EI 1879-0062
  • 通讯作者地址:   Kyoto Inst Technol
  • 被引频次:   2
  • DOI:   10.1016/j.diamond.2012.02.017
  • 出版年:   2012

▎ 摘  要

Few-layer epitaxial graphenes grown on vicinal 6H-SiC (0001) were characterized by confocal Raman imaging. In the beginning of the growth, the surface of SiC substrate was covered with monolayer graphene. Next, few-layer graphenes started to grow toward directions perpendicular to [11-20] of the SiC substrate. The shift in the G-peak was not straightforward with the increase in number of graphene layers. This result can be interpreted that the in-plane compressive stress from the substrate depends on the domain size of graphene. The 2D-peak frequency shifted to higher frequency side due to strong compressive strain from the substrate with increasing of the growth times. (C) 2012 Elsevier B.V. All rights reserved.