▎ 摘　　要

Changes in electrical properties of a bilayer graphene-based field-effect transistor (G-FET) after being oxidized through ultraviolet (UV)/ozone (O-3) treatment are presented. A decrease in conductivity and carrier mobility was observed after oxidation. However, electrical properties recovered after annealing oxidized G-FET with H-2/Ar, indicating that oxidation with UV/O-3 treatment was thermally reversible. Raman spectroscopy was conducted to verify that no defects were introduced after oxidation. The existence of chemical bonds between oxygen and graphene was confirmed from the X-ray photoelectron spectroscopy. Moreover, we found that graphene's sheet resistance increased after oxidation. Nevertheless, contact resistivity at graphene-Au/TiN electrode interface remained unchanged. (C) 2013 AIP Publishing LLC.