• 文献标题:   Optimization of CVD parameters for graphene synthesis through design of experiments
  • 文献类型:   Article
  • 作  者:   PAPON R, PIERLOT C, SHARMA S, SHINDE SM, KALITA G, TANEMURA M
  • 作者关键词:   chemical vapor deposition, cvd, epitaxy, graphene, growth optimization
  • 出版物名称:   PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS
  • ISSN:   0370-1972 EI 1521-3951
  • 通讯作者地址:   Nagoya Inst Technol
  • 被引频次:   1
  • DOI:   10.1002/pssb.201600629
  • 出版年:   2017

▎ 摘  要

The optimization process of the desired size and quality of graphene domains is usually very difficult due to the numerous interdependent parameters in chemical vapor deposition (CVD). Here, the method so-called designs of experiments is applied to estimate the relative importance and value of some of these parameters and their interactions for the CVD growth of graphene on Cu foil using waste plastic as a solid source. We found that the growth temperature, time, rate of heating, and preannealing time of the substrate influence significantly graphene growth. In particular, the growth time and rate of increasing of the carbon source temperature appear as the main factors for the growth of graphene domains, where the manipulation of only these two parameters could dramatically change the size of crystals. Thus, our experiment shows that for synthesis of larger graphene domains using waste plastic not only do the growth parameters of Cu substrate influence graphene growth but also the carbon source rate of heating.