▎ 摘　　要

The insertion of chemically vapor deposited graphene layers between Al metallization and Si substrates and between Au and Ni metal layers on Si substrates is shown to provide a significant reduction in spiking and intermixing of the metal contacts and reaction with the Si, where the bilayer graphene was transferred to the samples after the Cu-foil was etched. The graphene prevents reaction between Al and Si up to the temperatures of 700 degrees C and the intermixing of Au and Ni up to the temperatures of at least 600 degrees C. The outstanding performance of the graphene as a metal diffusion barrier will be very useful to improve the stability of the metallizations at elevated temperatures. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3701711]