• 文献标题:   Understanding Electronic Properties and Tunable Schottky Barriers in a Graphene/Boron Selenide van der Waals Heterostructure
  • 文献类型:   Article
  • 作  者:   NGUYEN ST, NGUYEN CQ, ANG YS, VAN HOANG N, HUNG NM, NGUYEN CV
  • 作者关键词:  
  • 出版物名称:   LANGMUIR
  • ISSN:   0743-7463
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1021/acs.langmuir.3c00709 EA APR 2023
  • 出版年:   2023

▎ 摘  要

van der Waals heterostructures provide a powerful platform for engineering the electronic properties and for exploring exotic physical phenomena of two-dimensional materials. Here, we construct a graphene/BSe heterostructure and examine its electronic characteristics and the tunability of contact types under electric fields. Our results reveal that the graphene/BSe heterostructure is energetically, mechanically, and thermodynamically stable at room temperature. It forms a p-type Schottky contact and exhibits a high carrier mobility, making it a promising candidate for future Schottky field-effect transistors. Furthermore, applying an electric field not only reduces contact barriers but also induces a transition from a p-type to an n-type Schottky contact and from a Schottky to an ohmic contact, offering further potential for the control and manipulation of the heterostructure's electronic properties. Our findings offer a rational basis for the design of energy-efficient and tunable heterostructure devices based on the graphene/BSe heterostructure.