• 文献标题:   Quasistatic Equilibrium Chemical Vapor Deposition of Graphene
  • 文献类型:   Review
  • 作  者:   ULLAH S, TA HQ, YANG XQ, LIU Y, HASAN M, BACHMATIUK A, LIU LJ, RUMMELI MH
  • 作者关键词:   cvd growth, graphene, high quality, quasistatic equilibrium, substrate, synthesi
  • 出版物名称:   ADVANCED MATERIALS INTERFACES
  • ISSN:   2196-7350
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1002/admi.202101500 EA NOV 2021
  • 出版年:   2022

▎ 摘  要

This study reviews the majorly used chemical vapor deposition (CVD) with a focus on confined reaction configurations in which quasistatic equilibrium conditions are obtained for the fabrication of graphene with large size and high quality through controlled nucleation density, feedstock flux, and growth rates. The confinement configurations can also be used to tune the thickness, domain size and shape, and stacking order of the synthetic graphene. The confined CVD reaction configurations discussed include enclosure systems, inner-tube setups, sandwiched substrates, as well as other types of configurations. The advantages and limitations of the different confinement configurations are presented, along ways to optimize the operational parameters for them.