▎ 摘　　要

We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at mu Torr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature. (C) 2014 AIP Publishing LLC.