▎ 摘　　要

The magnetoresistance of single-layer graphene on a Si/SiO2 substrate is measured in the temperature range of 2.5-150 K. It is found that, at high enough temperatures and away from the Dirac point, the resistance varies as the square root of the magnetic field. This agrees with a recent theoretical calculation of the magnetoresistance for the case of charge-carrier scattering by defects characterized by a short-range potential.